FQD11P06, FQU11P06 دیتاشیت

FQD11P06, FQU11P06

مشخصات دیتاشیت

نام دیتاشیت FQD11P06, FQU11P06
حجم فایل 1376.4 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت FQD11P06, FQU11P06

دانلود دیتاشیت

سایر مستندات

FQD11P06TM 11 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQD11P06TM
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2.5W;38W
  • Total Gate Charge (Qg@Vgs): 17nC@10V
  • Input Capacitance (Ciss@Vds): 550pF@25V
  • Continuous Drain Current (Id): 9.4A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 185mΩ@4.7A,10V
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 4.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: FQD1
  • detail: P-Channel 60V 9.4A (Tc) 2.5W (Ta), 38W (Tc) Surface Mount D-Pak

محصولات مشابه